Device deformation during low-frequency pulsed operation of high-power diode bars
Identifieur interne : 00A499 ( Main/Repository ); précédent : 00A498; suivant : 00A500Device deformation during low-frequency pulsed operation of high-power diode bars
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Abstract
Thermal tuning rates of single emitters in cm-bar high-power diode laser arrays are analyzed. We find these tuning rates to consist of purely thermal and mechanical pressure contributions, of -0.48 and -0.08 meV(K)-1, respectively. We estimate the mechanical deformation such a device experiences during pulsed operation to be 0.07%, and then apply an adequate external force to single segments of cm bars. These single segments model the central emitters within the array. Effects that arise due to gradual aging, such as nonequilibrium carrier lifetime decrease, sheet carrier concentration increase, and defect concentration rise are monitored and analyzed over up to 2×106 deformation cycles. These experiments provide the basis for a type of accelerated aging experiment for device testing, especially of devices designed for low-frequency pulsed operation. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Device deformation during low-frequency pulsed operation of high-power diode bars</title><author><name sortKey="Gerhardt, Axel" uniqKey="Gerhardt A">Axel Gerhardt</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A</wicri:regionArea><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Physics Department, 572M Holloway Rd., U.S. Naval Academy, Annapolis, Maryland 21402</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Physics Department, 572M Holloway Rd., U.S. Naval Academy, Annapolis</wicri:cityArea></affiliation></author><author><name sortKey="Weik, Fritz" uniqKey="Weik F">Fritz Weik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A</wicri:regionArea><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion></affiliation></author><author><name sortKey="Quoctran, Tien" uniqKey="Quoctran T">Tien Quoctran</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A</wicri:regionArea><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion></affiliation></author><author><name sortKey="Tomm, Jens W" uniqKey="Tomm J">Jens W. Tomm</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A</wicri:regionArea><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion></affiliation></author><author><name sortKey="Elsaesser, Thomas" uniqKey="Elsaesser T">Thomas Elsaesser</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A</wicri:regionArea><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion></affiliation></author><author><name sortKey="Biesenbach, Jens" uniqKey="Biesenbach J">Jens Biesenbach</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>DILAS Diodenlaser GmbH, Galileo-Galilei-Str. 10, 55129 Mainz, Germany</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>DILAS Diodenlaser GmbH, Galileo-Galilei-Str. 10, 55129 Mainz</wicri:regionArea><wicri:noRegion>55129 Mainz</wicri:noRegion><wicri:noRegion>55129 Mainz</wicri:noRegion></affiliation></author><author><name sortKey="Muntz, Holger" uniqKey="Muntz H">Holger Muntz</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>DILAS Diodenlaser GmbH, Galileo-Galilei-Str. 10, 55129 Mainz, Germany</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>DILAS Diodenlaser GmbH, Galileo-Galilei-Str. 10, 55129 Mainz</wicri:regionArea><wicri:noRegion>55129 Mainz</wicri:noRegion><wicri:noRegion>55129 Mainz</wicri:noRegion></affiliation></author><author><name sortKey="Seibold, Gabriele" uniqKey="Seibold G">Gabriele Seibold</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>DILAS Diodenlaser GmbH, Galileo-Galilei-Str. 10, 55129 Mainz, Germany</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>DILAS Diodenlaser GmbH, Galileo-Galilei-Str. 10, 55129 Mainz</wicri:regionArea><wicri:noRegion>55129 Mainz</wicri:noRegion><wicri:noRegion>55129 Mainz</wicri:noRegion></affiliation></author><author><name sortKey="Biermann, Mark L" uniqKey="Biermann M">Mark L. Biermann</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A</wicri:regionArea><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion><wicri:noRegion>Max-Born-Str. 2A</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0184236</idno><date when="2004-05-03">2004-05-03</date><idno type="stanalyst">PASCAL 04-0184236 AIP</idno><idno type="RBID">Pascal:04-0184236</idno><idno type="wicri:Area/Main/Corpus">00B984</idno><idno type="wicri:Area/Main/Repository">00A499</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aging</term><term>Aluminium compounds</term><term>Carrier lifetime</term><term>Deformation</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Power semiconductor diodes</term><term>Quantum well lasers</term><term>Semiconductor laser arrays</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>8140L</term><term>6220F</term><term>8140C</term><term>8530K</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Réseau laser semiconducteur</term><term>Laser puits quantique</term><term>Durée vie porteur charge</term><term>Déformation</term><term>Vieillissement</term><term>Diode semiconducteur puissance</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thermal tuning rates of single emitters in cm-bar high-power diode laser arrays are analyzed. We find these tuning rates to consist of purely thermal and mechanical pressure contributions, of -0.48 and -0.08 meV(K)<sup>-1</sup>, respectively. We estimate the mechanical deformation such a device experiences during pulsed operation to be 0.07%, and then apply an adequate external force to single segments of cm bars. These single segments model the central emitters within the array. Effects that arise due to gradual aging, such as nonequilibrium carrier lifetime decrease, sheet carrier concentration increase, and defect concentration rise are monitored and analyzed over up to 2×10<sup>6</sup> deformation cycles. These experiments provide the basis for a type of accelerated aging experiment for device testing, especially of devices designed for low-frequency pulsed operation. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>18</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Device deformation during low-frequency pulsed operation of high-power diode bars</s1></fA08><fA11 i1="01" i2="1"><s1>GERHARDT (Axel)</s1></fA11><fA11 i1="02" i2="1"><s1>WEIK (Fritz)</s1></fA11><fA11 i1="03" i2="1"><s1>QUOCTRAN (Tien)</s1></fA11><fA11 i1="04" i2="1"><s1>TOMM (Jens W.)</s1></fA11><fA11 i1="05" i2="1"><s1>ELSAESSER (Thomas)</s1></fA11><fA11 i1="06" i2="1"><s1>BIESENBACH (Jens)</s1></fA11><fA11 i1="07" i2="1"><s1>MUNTZ (Holger)</s1></fA11><fA11 i1="08" i2="1"><s1>SEIBOLD (Gabriele)</s1></fA11><fA11 i1="09" i2="1"><s1>BIERMANN (Mark L.)</s1></fA11><fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>DILAS Diodenlaser GmbH, Galileo-Galilei-Str. 10, 55129 Mainz, Germany</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Physics Department, 572M Holloway Rd., U.S. Naval Academy, Annapolis, Maryland 21402</s1></fA14><fA20><s1>3525-3527</s1></fA20><fA21><s1>2004-05-03</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. 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